摘要 |
<p>The present invention relates to an MTJ array sharing a pinned layer forming a magnetic tunnel junction element and a manufacturing method thereof. According to the present invention, a magnetic tunnel junction element array, formed of multiple magnetic tunnel junction elements connected in parallel, includes a pinned layer having a fixed magnetization direction and formed into a single shared layer for the magnetic tunnel junction array; divided free layers having a variably reversed magnetization direction and formed by being individually divided for each magnetic tunnel junction element; and a spacer formed between the pinned layer and the free layer and adjacent free layers. According to the present invention, in terms of forming the MTJ array formed of multiple layers, an etching area is minimized to minimize a difference between a design characteristic of an element and a characteristic of a produced element in a manufacturing process.</p> |