发明名称 MTJ ARRAY HAVING SHARED LAYER AND MANUFACTURING METHOD THEREOF
摘要 <p>The present invention relates to an MTJ array sharing a pinned layer forming a magnetic tunnel junction element and a manufacturing method thereof. According to the present invention, a magnetic tunnel junction element array, formed of multiple magnetic tunnel junction elements connected in parallel, includes a pinned layer having a fixed magnetization direction and formed into a single shared layer for the magnetic tunnel junction array; divided free layers having a variably reversed magnetization direction and formed by being individually divided for each magnetic tunnel junction element; and a spacer formed between the pinned layer and the free layer and adjacent free layers. According to the present invention, in terms of forming the MTJ array formed of multiple layers, an etching area is minimized to minimize a difference between a design characteristic of an element and a characteristic of a produced element in a manufacturing process.</p>
申请公布号 KR20140136341(A) 申请公布日期 2014.11.28
申请号 KR20130056752 申请日期 2013.05.20
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, SEOK HEE;BAEK, SEUNG HEON
分类号 H01L27/105 主分类号 H01L27/105
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