METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES

摘要

A method for manufacturing a semiconductor device is provided. A first stack structure and a second stack structure are formed to respectively cover a portion of a first fin structure and a second fin structure. Subsequently, a spacer is respectively formed on the sidewalls of the fin structures through an atomic layer deposition process and the composition of the spacers includes silicon carbon nitride. Afterwards, a interlayer dielectric is formed and etched so as to expose the hard mask layers. A mask layer is formed to cover the second stack structure and a portion of the dielectric layer. Later, the hard mask layer in the first stack structure is removed under the coverage of the mask layer. Then, a dummy layer in the first stack structure is replaced with a conductive layer.

主权项

1. A method for manufacturing a semiconductor device, wherein the semiconductor device has a first region and a second region, the method comprising:
forming a first fin structure and a second fin structure on a substrate, wherein the first fin structure and the second fin structure are in the first region and the second region respectively; forming a first stack structure and a second stack structure so as to respectively cover a portion of the first fin structure and of the second fin structure, wherein the first stack structure and the second stack structure respectively include a dummy layer and a hard mask layer from bottom to top; forming a spacer respectively on sidewalls of the first fin structure and of the second fin structure through an atomic layer deposition process, wherein a composition of the spacers includes silicon carbon nitride; forming an interlayer dielectric covering the first stack structure, the second stack structure and the spacers; etching the interlayer dielectric so as to expose each of the hard mask layers; forming a mask layer to cover the second stack structure and a portion of the dielectric layer; removing the hard mask layer in the first stack structure under a coverage of the mask layer; removing the dummy layer in the first stack structure to leave a first trench; and filling up the first trench with a conductive layer.