SEMICONDUCTOR STRUCTURE INCLUDING CONDUCTIVE MATERIAL, AND MEMORY CELL

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor structure which improves a performance, reliability and a density of conductive interconnection, and a memory cell.SOLUTION: A semiconductor structure 300 includes: a conductive structure 303 disposed on an electrode 308; a memory material 309 which is at least one of a chalcogenide material and an oxide material, in contact with the conductive structure 303; and a conductive material 312 containing silver, tantalum and at least one region containing another material, disposed on at least one of the memory materials 309. The semiconductor structure 300 includes the memory material 309 disposed on the conductive structure 303 and the conductive material 312 containing silver and another material, disposed on the memory material 309 and disposed within at least one opening.