发明名称 半導体記憶装置
摘要 PROBLEM TO BE SOLVED: To reduce current consumption during a refresh operation. SOLUTION: In a timing chart 100; during a refresh operation of WL0, SA00 of a memory bank 101 and SA10 of a memory bank 102 are overdriven and SA20 of a memory bank 103 and SA30 of a memory bank 104 are not overdriven. In the timing chart 100; during a refresh operation of WL1, the SA00 of the memory bank 101 and the SA20 of the memory bank 103 are overdriven and the SA10 of the memory bank 102 and the SA30 of the memory bank 104 are not overdriven. In the timing chart 100; during a refresh operation of WL2, the SA00 of the memory bank 101 and the SA30 of the memory bank 104 are overdriven and the SA10 of the memory bank 102 and the SA20 of the memory bank 103 are not overdriven. COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5630335(B2) 申请公布日期 2014.11.26
申请号 JP20110050742 申请日期 2011.03.08
申请人 发明人
分类号 G11C11/4091;G11C11/406 主分类号 G11C11/4091
代理机构 代理人
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