发明名称 |
Nitride semiconductor diode |
摘要 |
Disclosed is a high performance nitride semiconductor having a reverse leak current characteristic with two-dimensional electron gas as a conductive layer. A desired impurity is diffused into or a nitride semiconductor to which a desired impurity is added is re-grown on the bottom surface and the side face portion of a recessed portion formed by dry etching using chlorine gas on the upper surface of a nitride semiconductor stacked film to increase resistance of the side face portion of the nitride semiconductor stacked film contacting an anode electrode, reducing the reverse leak current. |
申请公布号 |
US8896027(B2) |
申请公布日期 |
2014.11.25 |
申请号 |
US201213684508 |
申请日期 |
2012.11.24 |
申请人 |
Hitachi, Ltd. |
发明人 |
Terano Akihisa;Mochizuki Kazuhiro;Tsuchiya Tomonobu |
分类号 |
H01L29/66;H01L29/205;H01L29/872;H01L29/16;H01L29/207;H01L29/06;H01L29/20;H01L29/47 |
主分类号 |
H01L29/66 |
代理机构 |
Miles & Stockbridge P.C. |
代理人 |
Miles & Stockbridge P.C. |
主权项 |
1. A nitride semiconductor diode comprising:
a substrate; a heterojunction stacked film on which a first nitride semiconductor layer formed on the substrate and a second nitride semiconductor layer greater in band gap energy than the first nitride semiconductor layer are stacked; a cathode electrode ohmically connected with the side face of the stacked film; and an anode electrode, wherein the stacked film is provided with a recessed portion which reaches the depth of a heterojunction surface being the interface of the first and second nitride semiconductor layers, wherein the recessed portion is provided with a region where at least one type of impurity selected from among a group of carbon (C), iron (Fe), zinc (Zn), and magnesium (Mg) is implanted, and wherein the anode electrode contacts the region and is schottky connected with the stacked film. |
地址 |
Tokyo JP |