发明名称 Photovoltaic device
摘要 Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
申请公布号 US8895846(B2) 申请公布日期 2014.11.25
申请号 US201012940876 申请日期 2010.11.05
申请人 Alta Devices, Inc. 发明人 Kizilyalli Isik C.;Archer Melissa;Atwater Harry;Gmitter Thomas J.;He Gang;Hegedus Andreas;Higashi Gregg
分类号 H01L31/00;H01L31/0735;H01L31/0236;H01L31/0304 主分类号 H01L31/00
代理机构 Sawyer Law Group, P.C. 代理人 Sawyer Law Group, P.C.
主权项 1. A photovoltaic device, comprising: a p+-doped AlGaAs layer, wherein recesses are formed in the p+-doped AlGaAs layer such that the recesses extend through the p+-doped AlGaAs layer; and a n-doped GaAs layer directly adjacent to the p+-doped AlGaAs layer, wherein the n-doped GaAs layer and p+-doped AlGaAs layer form a p-n heterojunction such that electric energy is created when light is absorbed by the p-n heterojunction; an interface layer comprising a Group III-V compound semiconductor above the p+-doped AlGaAs layer; a diffuser above the p+-doped AlGaAs layer, wherein the diffuser layer is covered with a reflective layer,wherein the diffuser layer and the interface layer are in direct contact with the p+-doped AlGaAs layer,wherein the diffuser layer is found in direct contact with a first side of the interface layer and in direct contact with a second side of the interface layer, andwherein the recesses in the p+-doped AlGaAs layer extend through the diffuser layer and the reflective layer; window layer below the n-doped GaAs layer, wherein a bottom surface of the p+-doped AlGaAs has been roughed to provide different angles for increased light trapping; and an antireflective coating disposed below the window layer.
地址 Sunnyvale CA US