| 摘要 |
<p>The invention describes a method of manufacturing a VCSEL module (100) comprising at least one VCSEL chip (33) with an upper side (U) and a lower side (L) and with a plurality of VCSEL units (55) on a common carrier structure (35), the VCSEL units (55) comprising a first doped layer (50) of a first type facing towards the lower side (L) and a second doped layer (23) of a second type facing towards the upper side (U). The method comprises the steps of dividing the VCSEL chip (33) into a plurality of subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) with at least one VCSEL unit (55) each, electrically connecting at least some of the subarrays (39a, 39b, 39c, 39d, 39e, 39f, 39g, 39h, 39i) in series. The invention also describes a VCSEL module (100) manufactured in such process.</p> |
