| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce on-state power loss of an IGBT while improving linearity of Vf-If characteristics of a FWD.SOLUTION: Assuming that the thickness of an ntype drift layer 1 is L1, a first parameter defined on the basis of structures of an IGBT 100 and a FWD 200 is k1, a value (k1-VSB/VAK(th)) obtained by multiplying a ratio of snap-back voltage (VSB) to built-in potential (VAK(th)) between the p-type deep well layer 13 and the ntype drift layer 1 by the first parameter k1 is K, and the width between divided portions out of the first area is W, the width W is set so as to satisfy W≥2×L1/Kbut K≥2.5. |
