METHOD OF PATTERNING A DEVICE

摘要

A fluorinated photopolymer is formed on a device substrate and exposed to patterned radiation. The photopolymer has a total fluorine content in a weight range of 15 to 60% and comprises at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit different from the first and second repeating units. The pattern-exposed photopolymer layer is contacted with a developing solution comprising at least a first fluorinated solvent that dissolves the unexposed photopolymer thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate. The developing solution is selected to provide a maximum photopolymer contrast in a range of 1.9 to 5.0.

主权项

1. A method of patterning a device comprising:
providing a layer of a fluorinated photopolymer over a device substrate, the fluorinated photopolymer comprising at least three distinct repeating units, including a first repeating unit having a fluorine-containing group, a second repeating unit having an acid- or alcohol-forming precursor group, and a third repeating unit different from the first and second repeating units, wherein the photopolymer has a total fluorine content in a weight range of 15 to 60%; exposing the photopolymer layer to patterned radiation to form an exposed photopolymer layer having a pattern of exposed photopolymer and a complementary pattern of unexposed photopolymer, wherein at least some of the acid- or alcohol-forming precursor groups in the exposed pattern react to form acid or alcohol groups; and contacting the exposed photopolymer layer with a developing solution comprising at least a first fluorinated solvent that dissolves the unexposed photopolymer thereby forming a developed structure having a first pattern of photopolymer covering the substrate and a complementary second pattern of uncovered substrate, the developing solution selected to provide a maximum photopolymer contrast in a range of 1.9 to 5.0.