Apparatus and methods for low K dielectric layers

摘要

Methods and apparatus for a low k dielectric layer of porous SiCOH. A method includes placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber to form a dielectric film comprising SiCOH and a decomposable porogen; depositing the dielectric film to have a ratio of Si—CH3 to SiOnetwork bonds of less than or equal to 0.25; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film. In one embodiment the porogen comprises a cyclic hydrocarbon. The porogen may be UV curable. In embodiments, different lowered Si—CH3 to SiOnetwork ratios for the deposition of the dielectric film are disclosed. An apparatus of a semiconductor device including the low k dielectric layers is disclosed.

主权项

1. A method, comprising:
placing a semiconductor substrate into a vapor deposition chamber; introducing reactive gases into the vapor deposition chamber comprising SiCOH and a decomposable porogen; depositing a dielectric film to have a Si—CH3/SiOnetwork ratio of less than or equal to 0.25 in the dielectric film as deposited, the dielectric film comprising at least a single carbon (C) atom, wherein monitoring is performed during the deposition of the dielectric film and adjustments are made to maintain the Si—CH3/SiOnetwork ratio during the deposition, the Si—CH3/SiOnetwork ratio being a ratio of Si—CH3 bonds and SiOnetwork bonds; and performing a cure for a cure time to remove substantially all of the porogen from the dielectric film.