Memory device

摘要

According to one embodiment, a memory device includes first to third interconnects, memory cells, and selectors. The first to third interconnects are provided along first to third directions, respectively. The memory cells includes variable resistance layers formed on two side surfaces, facing each other in the first direction, of the third interconnects. The selectors couple the third interconnects with the first interconnects. One of the selectors includes a semiconductor layer provided between associated one of the third interconnects and associated one of the first interconnects, and gates formed on two side surfaces of the semiconductor layer facing each other in the first direction with gate insulating films interposed therebetween.

主权项

1. A memory device comprising:
a plurality of first interconnects provided along a first direction, respectively; a plurality of second interconnects provided along a second direction different from the first direction, respectively; a plurality of third interconnects provided along a third direction different from the first and second directions, respectively; a plurality of memory cells including variable resistance layers formed on two side surfaces, facing each other in the first direction, of the third interconnects and coupled with the mutually different second interconnects; and a plurality of selectors which couple the third interconnects with the first interconnects, wherein one of the selectors includes a semiconductor layer provided between associated one of the third interconnects and associated one of the first interconnects, and a plurality of gates formed on two side surfaces of the semiconductor layer facing each other in the first direction with gate insulating films interposed therebetween.