Apparatus and method for controlling relative particle concentrations in a plasma

摘要

An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

主权项

1. An apparatus comprising:
a plasma control structure that defines a first portion of a plasma flow passage and a second portion of the plasma flow passage, wherein the first and second portions of the plasma flow passage are aligned in a line, the plasma control structure including:
a pair of electrodes placed at a hole of the first portion of the plasma flow passage and spaced transversely with respect to the first portion of the plasma flow passage; anda power supply coupled to the pair of electrodes and configured to vary a voltage between the pair of electrodes to vary a ratio of ions and radicals flowing through the first and second portion of the plasma flow passage.