| 摘要 |
<p>A semiconductor device includes a substrate, a pair of conductive lines which is separated from the substrate by an insulating layer, an insulating spacer which covers each sidewall of the pair of conductive lines to define a contact hole with a first width between the pair of conductive lines, an upper insulating pattern which defines a landing pad hole which has a second width which is larger than the first width in the upper part of the pair of conducive lines and is connected to the contact hole, a contact structure connected to the active region of the substrate, and a lower electrode of a capacitor connected to the contact structure. The contact structure includes a contact plug which penetrates the insulating layer, is connected to the active region of the substrate, and fills the contact hole, and a first landing pad which is integrally connected to the contact plug and is formed in the land pad hole to be vertically overlapped with one of the pair of conductive lines.</p> |
