| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor of a CMOS circuit capable of inhibiting the occurrence of a parasitic transistor caused by a tapered part of a semiconductor layer while inhibiting decrease in manufacturing efficiency.SOLUTION: A thin film transistor in which a first thin film transistor having a first semiconductor layer where a first channel region is formed and a second thin film transistor having a second semiconductor layer where a second channel region is formed form a CMOS circuit includes: first regions which are formed along peripheries of the first semiconductor layer in a width direction of the first semiconductor layer and arranged opposite to each other in the width direction of the first semiconductor layer across the channel region. The first region is implanted with first impurity ions larger in the number per unit area than the number of ions per unit area of the first channel region. The second channel region is implanted with both of the first impurity ions and second impurity ions in which the number of the second impurity ions per unit area is larger than the number of first impurity ions per unit area.</p> |
