SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a gate insulating layer over the substrate, the gate insulating layer having a dielectric constant greater than 10; a first barrier layer on the gate insulating layer; and an aluminum alloy gate on the first barrier layer.