| 发明名称 | Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition | ||
| 摘要 | A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes. | ||
| 申请公布号 | US8882935(B2) | 申请公布日期 | 2014.11.11 |
| 申请号 | US201313909775 | 申请日期 | 2013.06.04 |
| 申请人 | The Regents of the University of California;The Japan Science and Technology Agency | 发明人 | Chakraborty Arpan;Haskell Benjamin A.;Keller Stacia;Speck James S.;DenBaars Steven P.;Nakamura Shuji;Mishra Umesh K. |
| 分类号 | H01L33/16;H01L21/02;H01S5/343;B82Y20/00;H01L33/00;C30B29/40;C30B25/02;H01L33/06;H01S5/32;H01S5/02 | 主分类号 | H01L33/16 |
| 代理机构 | Gates & Cooper LLP | 代理人 | Gates & Cooper LLP |
| 主权项 | 1. A p-n junction device structure, comprising at least: nonpolar III-nitride layers, comprising at least one or more nonpolar oriented Indium-containing III-nitride layers, wherein a material quality of the nonpolar III-nitride layers enables the p-n junction device structure to function in response to direct current density between 43 amps per centimeter square and 222 Amps per centimeter square. | ||
| 地址 | Oakland CA US | ||