Method of manufacturing of trench substrate

摘要

Disclosed herein are a trench substrate and a method of manufacturing the same. The trench substrate includes a base substrate, an insulating layer formed on one side or both sides of the base substrate and including trenches formed in a circuit region and a dummy region positioned at a peripheral edge of the trench substrate, and a circuit layer formed in the trenches of the circuit region through a plating process and including a circuit pattern and vias. Thanks to formation of the trenches in the dummy region and the cutting region, deviation in thickness of a plating layer formed on the insulating layer in a plating process is improved upon.

主权项

1. A method of manufacturing a trench substrate, comprising:
(A) forming trenches in a circuit region, a dummy region positioned at a peripheral edge region of the trench substrate and a cutting region, all of which are defined on an insulating layer formed on one side or both sides of a base substrate, wherein a depth of the trenches is less than a thickness of the insulating layer; (B) forming a plating layer both in the trenches and on the insulating layer; (C) removing a surplus portion of the plating layer formed on the insulating layer; (D) applying etching resist onto the circuit removing the plating layer formed in the dummy region positioned at the peripheral edge region of the trench substrate and the cutting region, and removing the etching resist; and (E) forming an outer insulating layer both in the trenches formed in the dummy region positioned at the peripheral edge region of the trench substrate and on the insulating layer.