| 摘要 |
The present invention relates to methods for producing of multicrystalline silicon by means of induction method suitable for manufacture of solar cells. Method comprises determination of the calculated allocation of specific resistance in each ingot cross section obtained along the entire height of the ingot to be obtained according to selected step, point by point, in the central and peripheral parts. A weight and a number of portions of additional alloying element are determined according to the data obtained and the height of an elongated ingot, on which the corresponding portion of the additional alloying element is supplied. After melting a batch, forming a melt surface during extension of multicrystalline silicon ingot at a controlled cooling in a certain height of an elongated ingot it is performed dose supply of the corresponding alloying element. The method allows obtaining an ingot of the raw material which contains impurities of alloying elements with specified parameters along its volume. |
