| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
| 摘要 |
<p>A nitride semiconductor light-emitting element provided with a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron injection layer, and a light-emitting layer in this order. The average n-type dopant concentration of the second n-type nitride semiconductor layer is equal to or less than 0.53 times the average n-type dopant concentration of the first n-type nitride semiconductor layer. The average n-type dopant concentration of the n-type electron injection layer is equal to or greater than 1.5 times the average n-type dopant concentration of the second n-type nitride semiconductor layer.</p> |
| 申请公布号 |
WO2014178248(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
WO2014JP59122 |
申请日期 |
2014.03.28 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
WATANABE, MASANORI;KOMADA, SATOSHI;INOUE, TOMOYA;KAWABATA, KOSUKE |
| 分类号 |
H01L33/32 |
主分类号 |
H01L33/32 |
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