WRITE AND ERASE SCHEME FOR RESISTIVE MEMORY DEVICE

摘要

A method for programming a two terminal resistive memory device, the method includes applying a bias voltage to a first electrode of a resistive memory cell of the device; measuring a current flowing through the cell; and stopping the applying of the bias voltage if the measured current is equal to or greater than a predetermined value.

主权项

1. A device comprising:
a resistive switching device comprising a first electrode, a second electrode, and a resistive switching media disposed between the first electrode and the second electrode, wherein metal particles from the first electrode are disposed within the resistive switching media, wherein the resistive switching device is characterized by at least a first resistive state or a second resistive state; and a first circuit coupled to the first electrode, wherein the first circuit is configured to initiate applying a first state voltage to the first electrode, wherein the first circuit is configured to monitor a first current flowing through the resistive switching device in response to the first state voltage, wherein the first circuit is configured to determine a first current change rate in response to the current flowing through the resistive switching device with respect to time, and wherein the first circuit is configured to terminate applying the first state voltage to the resistive switching device when the first current change rate achieves a specified relation with respect to a first threshold current change rate.