BACK SCATTERED ELECTRON DETECTOR FOR SCANNING ELECTRON MICROSCOPE

摘要

The present invention relates to a back scattered electron detector for a scanning electron microscope which includes a photodiode (200) which is installed on a substrate (100) and forms an electron and a hole by a back scattered electron from a specimen. The photodiode (200) includes a first electrode (210) which is installed on the substrate (100), a semiconductor (220) which is formed by successively stacking an amorphous N-type semiconductor layer (221), an amorphous N-type semiconductor layer (222), and an amorphous P-type semiconductor layer (223) using a CVD method, and a second electrode (230) which is installed on the amorphous P-type semiconductor layer (223).