Methods for forming resistive switching memory elements by heating deposited layers

摘要

Resistive switching nonvolatile memory elements are provided. A metal-containing layer and an oxide layer for a memory element can be heated using rapid thermal annealing techniques. During heating, the oxide layer may decompose and react with the metal-containing layer. Oxygen from the decomposing oxide layer may form a metal oxide with metal from the metal-containing layer. The resulting metal oxide may exhibit resistive switching for the resistive switching memory elements.

主权项

1. A method for fabricating a resistive switching memory element, comprising:
forming a first layer that contains a first metal; forming a second layer that contains a second metal and oxygen; forming a resistive switching layer by heating the first and second layers so that the oxygen from the second layer oxidizes the first metal; and forming a metal layer from the second metal, wherein forming the metal layer comprises forming a second electrode.