| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasma CVD device that can generate plasma in a broad area of a cathode recess portion (hollow) in order to achieve a high-quality and large-area amorphous silicon thin film which has little defect and is contaminated with little high-order silane. <P>SOLUTION: A plasma CVD device has a ground electrode 11 for placing a film formed substrate 13, a cathode 3 which is disposed to be spaced from the ground electrode at an interval of 2 to 500 mm and connected to a high-frequency power source 15, and a potential shield plate 8 disposed between the cathode and the ground electrode. The cathode has a confronting surface 5 and plural recess portions 4 at the confronting side thereof to the ground electrode. The potential shield plate has a through hole 9 at each position opposing each recess portion of the cathode, and the through hole 9 has a projection area of 50 to 250% of the projection area of each recess portion onto a plane parallel to the potential shield plate. The cathode and the potential shield plate are arranged so that the interval between the nearest portions thereof is set to 0.1 to 20 mm. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
