Method for manufacturing thin film transistor

摘要

A method for manufacturing a thin film transistor includes forming a semiconductor layer, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; patterning the wiring layer and the semiconductor layer based on the patterned mask layer while irradiating external light; removing at least a part of the mask layer; forming a channel portion by etching the wiring layer while controlling irradiation of the external light. Further, the method for manufacturing the thin film transistor can obtain an improved structure by forming the semiconductor layer made of an oxide which reacts to external light irradiated thereto, thus capable of adjusting a selectivity between the semiconductor layer and the wiring layer.

主权项

1. A method for manufacturing a thin film transistor, the method comprising:
forming a semiconductor layer made of an IGZO-based oxide, a wiring layer and a patterned mask layer in sequence on a substrate on which a gate electrode and a gate insulating layer are formed; etching the wiring layer and the semiconductor layer while irradiating external light, based on the patterned mask layer; removing at least a part of the mask layer to expose the wiring layer below the mask layer; and forming a channel portion by etching the exposed wiring layer while controlling or blocking irradiation of the external light to prevent over-etching of the semiconductor layer.