PLASMA PROCESSING METHOD AND SUBSTRATE PROSESSING APPARATUS

摘要

The present invention provides a plasma processing method and a substrate processing apparatus. The plasma processing method comprises the steps of: mounting at least one first plasma source and at least one second plasma source in a chamber; supplying the first plasma source with a first gas; supplying the second plasma source with a second gas different from the first gas; forming a first plasma by applying power to the first plasma source; forming a second plasma by supplying power to the second plasma source; and processing a substrate disposed in the chamber by using the first plasma and the second plasma.