发明名称 Semiconductor device
摘要 The disclosed invention provides a semiconductor device capable of suitably controlling the level of an enable signal to resolve NBTI in a PMOS transistor. An input node receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby. A detection unit receives a signal through the input node and outputs an enable signal. The detection unit sets the enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period. A signal transmission unit includes a P-channel MOS transistor and transmits a signal input to the input node according to control by the enable signal.
申请公布号 US8872564(B2) 申请公布日期 2014.10.28
申请号 US201313769000 申请日期 2013.02.15
申请人 Renesas Electronics Corporation 发明人 Uchiki Hideki;Kishimoto Satoru
分类号 G06F1/04;H03K3/00;H03K17/687;H03K19/003;H03K17/56 主分类号 G06F1/04
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A semiconductor device comprising: an input node that receives an input signal alternating between high and low levels during normal operation and fixed to a high level during standby; a detection unit that sets an enable signal to a low level upon detecting that the input node remains at a high level for a predetermined period; and a signal transmission unit that includes P-channel MOS transistors and transmits a signal input to the input node according to control by the enable signal, wherein the signal transmission unit comprises: a first NAND circuit with one input coupled to the input node and the other input coupled to an output of the detection unit; and a second NAND circuit with one input coupled to an output of the first NAND circuit and the other input coupled to the output of the detection unit.
地址 Kanagawa JP