SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To avoid the necessity of performing an impurity ion implantation process and a process for forming irregularity on a base surface on which an ohmic electrode is formed, and to prevent a termination effect from being neutralized by sintering.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: performing on a rear face 1b of an ntype substrate 1, a surface treatment process for terminating an element which has electronegativity in polling larger than that of Si and bond energy with Si is larger than bond energy of Si-H; and subsequently forming a drain electrode 11 after performing the surface treatment process. This can make the drain electrode 11 formed on the rear face 1b be an ohmic electrode having favorable ohmic characteristics.