发明名称 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
摘要 <p>A MEMS device comprises a membrane layer 150 disposed over a substrate 100. The membrane layer 150 comprises corrugations 25 to relieve stress across the membrane layer 150 especially when the membrane layer 150 is under maximum strain (deflection). In one embodiment the MEMS device is a silicon microphone.</p>
申请公布号 KR101455454(B1) 申请公布日期 2014.10.27
申请号 KR20120063525 申请日期 2012.06.14
申请人 发明人
分类号 H01L29/84;H04R19/04 主分类号 H01L29/84
代理机构 代理人
主权项
地址