SOI WAFER FABRICATION METHOD

摘要

According to the present invention, there is provided a method for manufacturing an SOI wafer, the method having a step of performing a thickness reducing adjustment to an SOI layer of the SOI wafer by carrying out a sacrificial oxidation to the SOI wafer for effecting thermal oxidation to a surface of the SOI layer and removing a formed thermal oxide film, wherein, when the thermal oxidation in the sacrificial oxidation treatment is carried out with the use of a batch processing heat treatment furnace during one or both of rising of a temperature or falling of a temperature, a substantially concentric oxide film thickness distribution is formed on the surface of the SOI layer. As a result, there is provided the method for manufacturing an SOI wafer that enables manufacturing an SOI wafer having an improved radial film thickness distribution with good productivity by performing the sacrificial oxidation treatment for forming a substantially concentric oxide film and removing the formed thermal oxide film.