发明名称 Charge/discharge control circuit and charge/discharge method thereof
摘要 A charge/discharge circuit is configured to directly charge a storage system using a power source under a power-on stage and to charge the storage system using power pre-stored in a capacitor under a power-off stage. With the aid of the charge/discharge circuit, an access speed of the storage system is prevented from being slowed down by attaching the large capacitance of the capacitor, and data accuracy of the storage system is prevented from being affected by sudden loss of power supply of the power source.
申请公布号 US8867297(B1) 申请公布日期 2014.10.21
申请号 US201313938254 申请日期 2013.07.10
申请人 Transcend Information, Inc. 发明人 Lin Chia-Pin
分类号 G11C7/00;G11C5/14 主分类号 G11C7/00
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A charge/discharge control circuit, comprising: a capacitor, having a first terminal electrically coupled to ground; a discharge circuit, having a first terminal electrically coupled to a second terminal of the capacitor, having a second terminal electrically coupled to ground, and having a third terminal electrically coupled to a power source and a storage system, the discharge circuit configured to discharge a voltage level at the first terminal of the discharge circuit when a voltage level at the third terminal of the discharge circuit is lower than a threshold voltage level of the storage system; and a switch module, having a first terminal electrically coupled to the third terminal of the discharge circuit and having a second terminal electrically coupled to the first terminal of the discharge circuit, the switch module configured to electrically allow only a first current to flow from the power source to the second terminal of the capacitor when a voltage level of the power source is higher than an activate voltage level of the storage system and configured to allow only a second current to flow from the second terminal of the capacitor to the storage system when the voltage level of the power source is lower than the activate voltage level of the storage system; wherein the activate voltage level of the storage system is higher than the threshold voltage level of the storage system.
地址 NeiHu Dist, Taipei TW