Fin field effect transistor and fabrication method

摘要

A fin field effect transistor and a method for forming the fin field effect transistor are provided. In an exemplary method, the Fin FET can be formed by forming a dielectric layer and a fin on a semiconductor substrate. The fin can be formed throughout an entire thickness of the dielectric layer and a top surface of the fin is higher than a top surface of the dielectric layer. The fin can be annealed using a hydrogen-containing gas and a repairing gas containing at least an element corresponding to a material of the fin. A gate structure can be formed on the top surface of the dielectric layer and at least on sidewalls of a length portion of the fin after the annealing process.

主权项

1. A method for forming a fin field effect transistor, comprising:
providing a semiconductor substrate; forming a dielectric layer and a fin on the semiconductor substrate, wherein the fin is a protruded fin formed throughout an entire thickness of the dielectric layer, and the protruded fin has a top surface higher than a top surface of the dielectric layer; after forming the protruded fin, annealing the protruded fin using a hydrogen-containing gas and a repairing gas containing at least an element corresponding to a material of the fin, such that the top surface and each sidewall of the fin are sufficiently annealed to add the element corresponding to the material of the fin in the repairing gas into both the top surface and each sidewall surface of the fin; and forming a gate structure on the top surface of the dielectric layer and at least on sidewalls of a length portion of the fin after the annealing process.