Far End Resistance Tracking Design with Near End Pre-Charge Control for Faster Recovery Time

摘要

A wordline tracking circuit and corresponding method are disclosed, and include a tracking wordline having an impedance characteristic associated therewith that models a row of memory cells in a memory device, wherein the tracking wordline row has a near end that receives a wordline pulse signal having a near end rising pulse edge and a near end falling pulse edge. The tracking wordline also has a far end. A tracking cell component is coupled to the far end of the tracking wordline that receives the wordline pulse signal. Lastly, the circuit includes a tracking bitline pre-charge circuit coupled to the tracking cell that is configured to pre-charge a tracking bitline associated with the tracking cell using the near end wordline pulse signal.

主权项

1. A memory device, comprising:
a tracking wordline having an impedance characteristic that models an actual wordline impedance for a row of memory cells in the memory device; a wordline driver coupled to a near end of the tracking wordline, wherein the wordline driver is configured to provide a near end wordline pulse signal having a near end rising pulse edge and a near end falling pulse edge to the near end of the tracking wordline; a tracking cell component coupled to a far end of the tracking wordline, wherein the tracking cell component is configured to receive a far end wordline pulse signal that due to the impedance characteristic of the tracking wordline exhibits a far end rising pulse edge and a far end falling pulse edge that are degraded relative to the near end rising pulse edge and the near end falling pulse edge, respectively; and a pre-charge circuit configured to initiate a pre-charge operation based on at least one of a transition in the near end wordline pulse signal or a transition in the far end wordline pulse signal.