Image sensor and method for manufacturing the same

摘要

An image sensor may include a semiconductor substrate, a plurality of light receiving devices formed within the semiconductor substrate, and a plurality of device isolation films for isolating the light receiving devices from each other. When an arrangement direction of a pixel array may be formed by arranging the light receiving devices is a horizontal direction, the pixel array may be formed by alternately arranging a first type light receiving device and a second type light receiving device having different horizontal lengths.

主权项

1. An image sensor comprising:
a semiconductor substrate; a plurality of light receiving devices formed within the semiconductor substrate; and a plurality of device isolation films configured to isolate the plurality of light receiving devices from each other, wherein the plurality of light receiving devices comprises a plurality of first type light receiving devices and second type light receiving devices, the first type light receiving device and the second type light receiving device have different widths in a horizontal direction, a pixel array is formed by arranging the plurality of light receiving devices in the horizontal direction, the pixel array is formed by alternately arranging the first type light receiving device and the second type light receiving device, and each distance between the plurality of device isolation films respectively corresponds to the widths of the plurality of first type light receiving devices and the widths of the plurality of second type light receiving devices.