| 发明名称 | Reactor for producing polycrystalline silicon using the monosilane process | ||
| 摘要 | A reactor that produces polycrystalline silicon using a monosilane process includes a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows, a plurality of filament rods mounted on the reactor base plate, and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted. | ||
| 申请公布号 | US8858894(B2) | 申请公布日期 | 2014.10.14 |
| 申请号 | US200913144715 | 申请日期 | 2009.10.09 |
| 申请人 | Schmid Silicon Technology GmbH | 发明人 | Stöcklinger Robert |
| 分类号 | B01J19/00;C01B33/035;F28D7/00;B01J15/00;B01J19/24 | 主分类号 | B01J19/00 |
| 代理机构 | DLA Piper LLP (US) | 代理人 | DLA Piper LLP (US) |
| 主权项 | 1. A reactor that produces polycrystalline silicon using a monosilane process comprising: a reactor base plate having a multiplicity of nozzles formed therein through which a silicon-containing gas flows; a plurality of filament rods mounted on the reactor base plate; and a gas outlet opening located at a selected distance from the nozzles to feed used monosilane to an enrichment and/or treatment stage, wherein the gas outlet opening is formed at a free end of an inner tube, the inner tube is conducted through the reactor base plate, and the inner tube has an outer wall and an inner wall and thus forms an intermediate space in which at least one cooling water circuit is conducted. | ||
| 地址 | DE | ||