| 发明名称 |
Multi-doped silicon antifuse device for integrated circuit |
| 摘要 |
The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. |
| 申请公布号 |
US8860176(B2) |
申请公布日期 |
2014.10.14 |
| 申请号 |
US201213654040 |
申请日期 |
2012.10.17 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Fritz Gregory M.;Hekmatshoartabari Bahman;Khakifirooz Ali;Pfeiffer Dirk;Rodbell Kenneth P.;Shahrjerdi Davood |
| 分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
| 代理机构 |
|
代理人 |
Percello Louis J. |
| 主权项 |
1. An antifuse comprising:
a reactive material; and a silicon region comprising amorphous silicon and thermally coupled to the reactive material, wherein an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state, and wherein the amorphous silicon is doped with at least one of: deuterium or helium. |
| 地址 |
Armonk NY US |
