| 摘要 |
<p>The present invention relates to a substrate treating apparatus and a method thereof. More specifically, the present invention relates to a substrate treating apparatus using plasma, and a method thereof. According to an embodiment of the present invention, a substrate treating apparatus includes: a chamber which provides a processing space to perform a process; a substrate support unit which supports a substrate in the processing process; a gas supply unit which supplies a process gas to the processing space; and a plasma generating unit which generates plasma from the process gas supplied from the processing space. The plasma generating unit has an antenna member provided to the upper part of the chamber, a control pad located on the upper part of the antenna member, and a driving member which moves the control pad up and down.</p> |
