SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A method of manufacturing a semiconductor device, a semiconductor device and systems incorporating the same include transistors having a gate metal doped with impurities. An altered work function of the transistor may alter a threshold voltage of the transistor. In certain embodiments, a gate metal of a first MOSFET is doped with impurities. A gate metal of a second MOSFET may be left undoped, doped with the same impurities with a different concentration, and/or doped with different impurities. In some embodiments, the MOSFETs are FinFETs, and the doping may be a conformal doping

主权项

1. A method for fabricating a semiconductor device comprising:
providing a substrate and first and second active fins on the substrate; forming first source and drain regions in the first active fin and second source and drain regions in the second active fin; forming a first gate insulating film on the first active fin and a second gate insulating film on the second active fin; forming a first gate material on the first gate insulating film and a second gate material on the second gate insulating film, each of the first and second gate material has a first work function; forming a first mask film on the second gate material to expose the first gate material and cover the second gate material; and performing a first isotropic doping process such that the first gate material has a second work function different from the first work function and the second gate material has the first work function.