FORMATION OF THE DIELECTRIC CAP LAYER FOR A REPLACEMENT GATE STRUCTURE

摘要

Gate to contact shorts are reduced by forming dielectric caps in replaced gate structures. Embodiments include forming a replaced gate structure on a substrate, the replaced gate structure including an ILD having a cavity, a first metal on a top surface of the ILD and lining the cavity, and a second metal on the first metal and filling the cavity, planarizing the first and second metals, forming an oxide on the second metal, removing the oxide, recessing the first and second metals in the cavity, forming a recess, and filling the recess with a dielectric material. Embodiments further include dielectric caps having vertical sidewalls, a trapezoidal shape, a T-shape, or a Y-shape.

主权项

1. A device comprising:
an interlayer dielectric (ILD) on substrate, the ILD having a cavity; gate spacers on sidewalls of the cavity; a first metal lining a bottom portion of the cavity between the gate spacers; a second metal filling the bottom portion of the cavity; and a dielectric cap in the top portion of the cavity.