发明名称 |
METHOD FOR TREATING METALLIC OXIDE SURFACE AND METHOD FOR PREPARING THIN FILM TRANSISTOR |
摘要 |
<p>Embodiments of the present invention provide a method for surface treatment on a metal oxide and a method for preparing a thin film transistor. The method for surface treatment on a metal oxide comprises: utilizing plasma to perform a surface treatment on a device to be processed; the plasma comprises a mixture gas of an F-based gas and O 2 , and the device to be processed is a metal oxide or a manufactured article coated with a metal oxide. The embodiments provided by the present invention can reduce the contact resistance between a metal oxide and other electrodes, and improve the effect of ohmic contact of the metal oxide.</p> |
申请公布号 |
EP2787527(A1) |
申请公布日期 |
2014.10.08 |
申请号 |
EP20120778028 |
申请日期 |
2012.08.22 |
申请人 |
BOE TECHNOLOGY GROUP CO. LTD. |
发明人 |
LIU, XIAODI;CHENG, JUN |
分类号 |
H01L21/465;H01L29/66;H01L29/786 |
主分类号 |
H01L21/465 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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