发明名称 MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
摘要 <p>Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another.</p>
申请公布号 KR20140119076(A) 申请公布日期 2014.10.08
申请号 KR20147021465 申请日期 2012.12.20
申请人 MICRON TECHNOLOGY, INC. 发明人 SANDHU GURTEJ S.;SRINIVASAN BHASKAR
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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