发明名称 |
Semiconductor apparatus and electronic equipment |
摘要 |
A method for manufacturing the semiconductor apparatus includes an anchor process of forming a barrier metal film and carrying out physical etching making use of sputter gas. The anchor process is carried out at the same time on a wire connected to the lower portion of a first aperture serving as a penetration connection hole and a wire connected to the lower portion of a second aperture serving as a connection hole having an aspect ratio different from the aspect ratio of the penetration connection hole. The first and second apertures are apertures created on a semiconductor substrate obtained by bonding first and second semiconductor substrates to each other. The present technology can be applied to the semiconductor apparatus such as a solid-state imaging apparatus. |
申请公布号 |
US8853852(B2) |
申请公布日期 |
2014.10.07 |
申请号 |
US201213671130 |
申请日期 |
2012.11.07 |
申请人 |
Sony Corporation |
发明人 |
Hayashi Toshihiko |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
Sheridan Ross P.C. |
代理人 |
Sheridan Ross P.C. |
主权项 |
1. A method for manufacturing a semiconductor apparatus, comprising:
a first process of forming a barrier metal film and carrying out physical etching making use of sputter gas to serve as a process to be carried out at the same time on wires connected to lower portions of first and second apertures created on a semiconductor substrate obtained by bonding first and second semiconductor substrates to each other to serve as first and second apertures having aspect ratios different from each other; and after forming a barrier metal layer and carrying out physical etching, carrying out a seed film formation process to form a seed layer on surfaces of the first and second apertures. |
地址 |
JP |