Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers

摘要

A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.

主权项

1. A synthetic antiferromagnetic (SAF) device, comprising:
a reference layer having a first ruthenium (Ru) layer and a second Ru layer; a spacer layer disposed on the reference layer; a storage layer disposed on the spacer layer, the storage layer including an additional Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å; a cap layer disposed on the storage layer; a cobalt iron boron (CoFeB) layer disposed on the spacer layer; a third Ru layer disposed on the CoFeB layer; and additional CoFeB layer disposed on the third Ru layer.