| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas production apparatus capable of maintaining a high gas generation efficiency regardless of the passage of time and of stably manufacturing hydrogen and oxygen gases as perfectly separated high-purity gases.SOLUTION: The problem-solving gas production apparatus includes: an element laminate obtained by serially laminating multiple elements on which thin semiconductor films possessing pn junctions are formed and possessing a light reception unit on one side thereof and an electroconductive substrate on the other side thereof; a hydrogen gas generation unit formed on the surface of a first element positioned on the light reception unit side; a first electrolytic chamber including the hydrogen gas generation unit; an oxygen gas generation unit formed on the rear surface of the electroconductive substrate; a second electrolytic chamber including the oxygen gas generation unit; and an ion-permeable, gas-impermeable diaphragm configured in-between the first electrolytic chamber and the second electrolytic chamber. |
