SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To solve the problem that a laminate structure having a polysilicon provided in a lower layer and a compound of high melting point metal and polysilicon provided in an upper layer is conventionally used when forming a polycide gate, but this approach limits an attempt to lower the resistance, delays a circuit operation, and also complicates a manufacturing process.SOLUTION: A semiconductor device pertaining to the present invention creates only the top of a polysilicon gate electrode with silicide. Since a part of the gate electrode in contact with a gate insulation film remains to be composed of polysilicon, a MOSFET having the polysilicon gate electrode can be created to have electric characteristics exactly as designed, and the resistance of the gate electrode can be reduced. This makes it possible to manufacture a high-speed semiconductor device without a delay in circuit operation.