| 摘要 |
The present invention relates to the technical field of radio-frequency power devices, in particular to a radio-frequency power device for realizing source-drain gate asymmetrical self-alignment and manufacturing method thereof. The radio-frequency power device for realizing source-drain gate asymmetrical self-alignment utilizes a gate electrode side wall to realize self-alignment of the positions of a gate electrode, a drain electrode and a source electrode, thus reducing product parameter drifts. In addition, the gate electrode is protected by a passivation layer, such that the source electrode and drain electrode of the device can be formed via an alloying process, an epitaxy process or an ion implantation process after the formation of the gate electrode. With a simple technical process, the present invention reduces source-drain parasitic resistance and increases electrical properties of a radio-frequency power device. |
