| 摘要 |
Light-emitting diode (100) comprising: a first layer (102) of n-doped semiconductor able to form a cathode, and a second layer (104) of p-doped semiconductor able to form an anode, and forming together a p-n junction of the diode; an active zone (105) arranged between the first layer and the second layer, comprising at least two light-emitting layers (106) comprising the semiconductor and able to form quantum wells, and a plurality of semiconductor barrier layers (108) such that each light-emitting layer is placed between two barrier layers; and an n-doped semiconductor buffer layer (110) placed between the first layer and the active zone, said n-doped semiconductor of the buffer layer having a bandgap energy lower than or equal to about 97% of the bandgap energy of the p-doped semiconductor of the second layer. |
