DIELECTRIC VOID ETCHED IN FINFET SACRIFICIAL LAYER
摘要
<p>A finFET and method of fabrication are disclosed. A sacrificial layer is formed on a bulk semiconductor substrate. A top semiconductor layer (such as silicon) is disposed on the sacrificial layer. The bulk semiconductor substrate is recessed in the area adjacent to the transistor gate and a stressor layer is formed in the recessed area. The sacrificial layer is selectively removed and replaced with an insulator, such as a flowable oxide. The insulator provides isolation between the transistor channel and the bulk substrate without the use of dopants.</p>
