| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device (photodiode) having good characteristics.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an Ntype epitaxial layer on a Ptype epitaxial layer; forming an oxide film on the Ntype epitaxial layer; then forming an opening by selectively removing a part of the oxide film; forming an Ntype Si epitaxial layer NEP on a part of the Ntype epitaxial layer exposed from the opening in the oxide film; forming a non-doped Si epitaxial layer iEP thereon; and thereafter forming an oxide film 11 by oxidizing a surface of the non-doped Si epitaxial layer iEP. In the method, an n-type impurity in the Ntype Si epitaxial layer NEP is diffused into a remaining part of the non-doped Si epitaxial layer iEP. Thus, a film good in crystallinity, but less in OSF in the oxide film 11 can be obtained. The sensitivity of light receiving can be increased by enhancing the characteristics of the oxide film 11 and reducing centers of recombination in this way. |
