Semiconductor device

摘要

According to one embodiment, a semiconductor device includes a base region of a second conductivity type, a drift region of a first conductivity type, an insulating layer, a drain region of the first conductivity type, a gate oxide film, a gate electrode, a first main electrode, and a second main electrode. The base region includes a source region of the first conductivity type. The drift region is adjacent to the base region. The insulating layer is provided from a surface to inside of the drift region. The drain region is provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer. The gate oxide film is provided on a surface of the base region. The gate electrode is provided on the gate oxide film. The first main electrode is connected to the source region. The second main electrode is connected to the drain region. As viewed in a direction perpendicular to the surface of the base region, the source region and at least a part of the drain region extend generally parallel in a line shape, and a length of a portion of the drift region sandwiched between the insulating layer and the base region is shorter in the generally parallel extending direction than in a direction generally perpendicular to the generally parallel extending direction.

主权项

1. A semiconductor device comprising:
a base region of a second conductivity type including a source region of a first conductivity type, and a side surface of a corner of the base region being chamfered; a drift region of the first conductivity type adjacent to the base region, and a side surface of a corner of the drift region being chamfered; an insulating layer provided from a surface to inside of the drift region; a drain region of the first conductivity type provided in the surface of the drift region and opposed to the source region across the base region and the insulating layer; a gate oxide film provided on a surface of the base region; and a gate electrode provided on the gate oxide film; as viewed in a direction perpendicular to the surface of the base region, the base region being surrounded by the drift region and the insulating layer, the source region and at least a part of the drain region extending generally parallel in a line shape, and a length of a portion of the drift region sandwiched between the insulating layer and the base region in the generally parallel extending direction being 1.8 micrometers (μm) or less.