METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-performance junction FET at a high yield.SOLUTION: A method for manufacturing a junction field-effect transistor according to one embodiment comprises the steps: (a) forming an ntype source layer 3 on a surface of an ntype drift layer 2 formed on an ntype SiC substrate 1; (b) forming shallow grooves 4 disposed at intervals of a predetermined distance by etching the surface of the ntype drift layer 2 using, as a mask, a silicon oxide film 21 formed on the ntype drift layer 2 after the step (a); (c) forming an n-type counter doped layer 5 by doping parts of the ntype drift layer 2 located under shallow grooves 4 with nitrogen by means of a vertical ion implantation method after the step (b); (d) forming side wall spacers 6 on side walls of the silicon oxide film and the shallow grooves 4 after the step (c); and (e) forming a p-type gate layer 7 by doping parts of the ntype drift layer 2 located under the shallow grooves 4 with aluminum by means of the vertical ion implantation method after the step (d).